PartNumber | FZT968TA | FZT968TA , 1WMB2R2 | FZT968TA/TC |
Description | Bipolar Transistors - BJT PNP HighCt HighV | ||
Manufacturer | Diodes Incorporated | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-223-4 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | - 12 V | - | - |
Collector Base Voltage VCBO | - 15 V | - | - |
Emitter Base Voltage VEBO | - 6 V | - | - |
Collector Emitter Saturation Voltage | - 360 mV | - | - |
Maximum DC Collector Current | 6 A | - | - |
Gain Bandwidth Product fT | 80 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | FZT968 | - | - |
DC Current Gain hFE Max | 300 | - | - |
Height | 1.65 mm | - | - |
Length | 6.7 mm | - | - |
Packaging | Reel | - | - |
Width | 3.7 mm | - | - |
Brand | Diodes Incorporated | - | - |
Continuous Collector Current | - 6 A | - | - |
DC Collector/Base Gain hfe Min | 300 at 10 mA, 1 V, 300 at 500 mA, 1 V, 200 at 5 A, 1 V, 150 at 10 A, 1 V | - | - |
Pd Power Dissipation | 3 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.003951 oz | - | - |