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| PartNumber | GS61008P-E05-MR | GS61008P-E05 | GS61008P-E05-B |
| Description | MOSFET 100V 80A E-Mode GaN | GAN POWER TRANSISTOR | |
| Manufacturer | GaN Systems | GaN Systems | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | GaN | GaN | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | GaNPX-4 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 90 A | - | - |
| Rds On Drain Source Resistance | 7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | - | - |
| Vgs Gate Source Voltage | 7 V | - | - |
| Qg Gate Charge | 12 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 0.51 mm | - | - |
| Length | 7.5 mm | - | - |
| Product | MOSFET | - | - |
| Series | GS6100x | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.6 mm | - | - |
| Brand | GaN Systems | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | GS61008P-E05-MR | - | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1.6 V | - |
| Rds On Drain Source Resistance | - | 7.4 mOhms | - |
| Qg Gate Charge | - | 12 nC | - |