 |  | | |
| PartNumber | GS66502B-E01-MR | GS66504-E01-MR | GS66504B-E01 |
| Description | MOSFET 650V Enhancement Mode Transistor | ||
| Manufacturer | GaN Systems | - | GaN Systems |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | GaN | - | GaN |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | GaNPX-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 7.5 A | - | - |
| Rds On Drain Source Resistance | 200 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | - | - |
| Vgs Gate Source Voltage | 7 V | - | - |
| Qg Gate Charge | 1.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | Reel |
| Height | 0.51 mm | - | - |
| Length | 6.6 mm | - | - |
| Product | MOSFET | - | - |
| Series | GS6650x | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | GaN Systems | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | GS66502B-E01-MR | - | - |
| Vgs Gate Source Voltage | - | - | 10 V |
| Vds Drain Source Breakdown Voltage | - | - | 650 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.6 V |
| Rds On Drain Source Resistance | - | - | 110 mOhms |
| Qg Gate Charge | - | - | 3.3 nC |