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| PartNumber | GS66508P-E05-MR | GS66508P-E05-TY | GS66508P-E04-TY |
| Description | MOSFET 650V 30A E-Mode GaN | MOSFET 650V 30A E-Mode GaN Preproduction Units | MOSFET 650V 30A E-Mode GaN Preproduction Units |
| Manufacturer | GaN Systems | GaN Systems | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | GaN | GaN | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | GaNPX-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 55 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.7 V | - | - |
| Vgs Gate Source Voltage | 7 V | - | - |
| Qg Gate Charge | 5.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Tray | - |
| Height | 0.51 mm | - | - |
| Length | 10 mm | - | - |
| Product | MOSFET | - | - |
| Series | GS6650x | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 8.7 mm | - | - |
| Brand | GaN Systems | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | GS66508P-E05-MR | - | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Id Continuous Drain Current | - | 30 A | - |
| Vds Drain Source Breakdown Voltage | - | 650 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1.6 V | - |
| Rds On Drain Source Resistance | - | 55 mOhms | - |
| Qg Gate Charge | - | 6.5 nC | - |