HFA3096BZ vs HFA3096BZ96 vs HFA3096BZ-T

 
PartNumberHFA3096BZHFA3096BZ96HFA3096BZ-T
DescriptionBipolar Transistors - BJT W/ANNEAL TXARRAY 3X NPN 2XPNP16NSOIC MILRF Bipolar Transistors W/ANNEAL TXARRAY 3X NPN 2X PNP 16N
ManufacturerRenesas ElectronicsRenesas Electronics-
Product CategoryBipolar Transistors - BJTRF Bipolar Transistors-
RoHSYY-
Package / CaseSOIC-Narrow-16SOIC-Narrow-16-
Transistor PolarityNPN, PNPNPN/PNP-
ConfigurationQuintQuint-
Collector Emitter Voltage VCEO Max8 V8 V-
Collector Base Voltage VCBO12 V12 V-
Emitter Base Voltage VEBO5.5 V5.5 V-
Maximum DC Collector Current0.065 A0.065 A-
Gain Bandwidth Product fT8000 MHz8000 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 125 C+ 125 C-
SeriesHFA3096HFA3096-
Height1.5 mm1.5 mm-
Length10 mm10 mm-
PackagingTubeReel-
Width4 mm4 mm-
BrandRenesas / IntersilRenesas / Intersil-
DC Collector/Base Gain hfe Min40 at 10 mA, 2 V at NPN, 20 at 10 mA, 2 V at PNP40-
Moisture SensitiveYesYes-
Pd Power Dissipation150 mW150 mW-
Product TypeBJTs - Bipolar TransistorsRF Bipolar Transistors-
Factory Pack Quantity482500-
SubcategoryTransistorsTransistors-
Unit Weight0.004938 oz0.004938 oz-
Transistor Type-Bipolar-
Technology-Si-
Continuous Collector Current-0.065 A-
DC Current Gain hFE Max-40 at 10 mA at 2 V at NPN, 20 at 10 mA at 2 V at PNP-
Operating Frequency-8 GHz, 5.5 GHz-
Type-RF Bipolar Small Signal-
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