PartNumber | HFA3096BZ | HFA3096BZ96 | HFA3096BZ-T |
Description | Bipolar Transistors - BJT W/ANNEAL TXARRAY 3X NPN 2XPNP16NSOIC MIL | RF Bipolar Transistors W/ANNEAL TXARRAY 3X NPN 2X PNP 16N | |
Manufacturer | Renesas Electronics | Renesas Electronics | - |
Product Category | Bipolar Transistors - BJT | RF Bipolar Transistors | - |
RoHS | Y | Y | - |
Package / Case | SOIC-Narrow-16 | SOIC-Narrow-16 | - |
Transistor Polarity | NPN, PNP | NPN/PNP | - |
Configuration | Quint | Quint | - |
Collector Emitter Voltage VCEO Max | 8 V | 8 V | - |
Collector Base Voltage VCBO | 12 V | 12 V | - |
Emitter Base Voltage VEBO | 5.5 V | 5.5 V | - |
Maximum DC Collector Current | 0.065 A | 0.065 A | - |
Gain Bandwidth Product fT | 8000 MHz | 8000 MHz | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 125 C | + 125 C | - |
Series | HFA3096 | HFA3096 | - |
Height | 1.5 mm | 1.5 mm | - |
Length | 10 mm | 10 mm | - |
Packaging | Tube | Reel | - |
Width | 4 mm | 4 mm | - |
Brand | Renesas / Intersil | Renesas / Intersil | - |
DC Collector/Base Gain hfe Min | 40 at 10 mA, 2 V at NPN, 20 at 10 mA, 2 V at PNP | 40 | - |
Moisture Sensitive | Yes | Yes | - |
Pd Power Dissipation | 150 mW | 150 mW | - |
Product Type | BJTs - Bipolar Transistors | RF Bipolar Transistors | - |
Factory Pack Quantity | 48 | 2500 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.004938 oz | 0.004938 oz | - |
Transistor Type | - | Bipolar | - |
Technology | - | Si | - |
Continuous Collector Current | - | 0.065 A | - |
DC Current Gain hFE Max | - | 40 at 10 mA at 2 V at NPN, 20 at 10 mA at 2 V at PNP | - |
Operating Frequency | - | 8 GHz, 5.5 GHz | - |
Type | - | RF Bipolar Small Signal | - |