HMC667LP2ETR vs HMC667LP2E vs HMC667LP2

 
PartNumberHMC667LP2ETRHMC667LP2EHMC667LP2
DescriptionRF Amplifier SMT lo Noise amp, 2.3 to 2.7 GHzRF Amplifier SMT lo Noise amp 2.3 to 2.7 GHzIC RF AMP GP 2.3GHZ-2.7GHZ 6DFN
ManufacturerAnalog Devices Inc.Analog Devices Inc.Analog Devices Inc.
Product CategoryRF AmplifierRF AmplifiersRF Amplifiers
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDFN-6--
TypeLow Noise AmplifierLow Noise Amplifier-
TechnologyGaAsGaAs-
Operating Frequency2.3 GHz to 2.7 GHz2.3 GHz to 2.7 GHz-
P1dB Compression Point16.5 dBm--
Gain19 dB19dB19dB
Operating Supply Voltage5 V5 V-
NF Noise Figure0.75 dB--
OIP3 Third Order Intercept29.5 dBm--
Operating Supply Current59 mA59 mA-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 85 C+ 85 C-
SeriesHMC667HMC667-
PackagingReelCut Strip Alternate PackagingCut Strip Alternate Packaging
BrandAnalog Devices / Hittite--
Number of Channels1 Channel1 Channel-
Input Return Loss12 dB12 dB-
Pd Power Dissipation0.38 W--
Product TypeRF Amplifier--
Factory Pack Quantity500--
SubcategoryWireless & RF Integrated Circuits--
Unit Weight0.000744 oz21100 mg-
Package Case-6-VFDFN Exposed Pad6-VFDFN Exposed Pad
Frequency-2.3GHz ~ 2.7GHz2.3GHz ~ 2.7GHz
Frequency Range-2.3 GHz to 2.7 GHz-
Voltage Supply-3 V ~ 5 V3 V ~ 5 V
Supplier Device Package-6-DFN (2x2)6-DFN (2x2)
Current Supply-59mA59mA
Test Frequency---
P1dB-16.5dB16.5dB
Noise Figure-0.9dB0.9dB
RF Type-General PurposeGeneral Purpose
Pd Power Dissipation-0.38 W-
NF Noise Figure-0.75 dB-
P1dB Compression Point-16.5 dbm-
OIP3 Third Order Intercept-29.5 dBm-
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