 |  |  | |
| PartNumber | HMC-ALH216-SX | HMC-ALH216 | HMC-ALH216-E |
| Description | RF Amplifier GaAs HEMT WBand lo Noise amp 14-27 GHz | RF Amplifier GaAs HEMT WBand lo Noise amp, 14-27 GHz | IC RF AMP GP 14-27GHZ DIE 1=2PC |
| Manufacturer | Analog Devices Inc. | Analog Devices Inc. | - |
| Product Category | RF Amplifier | RF Amplifier | - |
| RoHS | Y | Y | - |
| Series | HMC-ALH216G | HMC-ALH216G | - |
| Packaging | Gel Pack | Gel Pack | - |
| Brand | Analog Devices | Analog Devices / Hittite | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Product Type | RF Amplifier | RF Amplifier | - |
| Factory Pack Quantity | 2 | 50 | - |
| Subcategory | Wireless & RF Integrated Circuits | Wireless & RF Integrated Circuits | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | Die | - |
| Type | - | Low Noise Amplifier | - |
| Technology | - | GaAs | - |
| Operating Frequency | - | 14 GHz to 27 GHz | - |
| P1dB Compression Point | - | 14 dBm | - |
| Gain | - | 18 dB | - |
| Operating Supply Voltage | - | 4 V | - |
| NF Noise Figure | - | 2.7 dB | - |
| Operating Supply Current | - | 90 mA | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 85 C | - |
| Input Return Loss | - | 15 dB | - |
| Pd Power Dissipation | - | 1.4 W | - |