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| PartNumber | HP8S36TB | HP8S36 | HP8S36 , 2SB1571-FY |
| Description | MOSFET 30V Nch+Nch Si MOSFET | ||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | HSOP-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 27 A, 80 A | - | - |
| Rds On Drain Source Resistance | 6.7 mOhms, 2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | - | - |
| Vgs Gate Source Voltage | 20 V, 12 V | - | - |
| Qg Gate Charge | 4.8 nC, 47 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | ROHM Semiconductor | - | - |
| Forward Transconductance Min | 10 S, 30 S | - | - |
| Fall Time | 3.4 ns, 66 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.5 ns, 27 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25.5 ns, 186 ns | - | - |
| Typical Turn On Delay Time | 9.6 ns, 34 ns | - | - |
| Part # Aliases | HP8S36 | - | - |