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| PartNumber | HS8K11TB | HS8K11 | HS8K11 , 2SB736-BW4 |
| Description | MOSFET 30V Nch+Nch Power MOSFET | ||
| Manufacturer | ROHM Semiconductor | ROHM | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | HSML3030L-10 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 7 A, 11 A | - | - |
| Rds On Drain Source Resistance | 12.8 mOhms, 10.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V, 12 V | - | - |
| Qg Gate Charge | 11.1 nC, 20.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | ROHM Semiconductor | - | - |
| Fall Time | 5.1 ns, 7.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10.8 ns, 15 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26.8 ns, 47.3 ns | - | - |
| Typical Turn On Delay Time | 9.4 ns, 13.6 ns | - | - |
| Part # Aliases | HS8K11 | - | - |