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| PartNumber | IDD04S60CBUMA1 | IDD04SG60C | IDD04S60C |
| Description | DIODE SCHOTTKY 600V 5.6A TO252-3 | Schottky Diodes & Rectifiers SIC DIODEN | Schottky Diodes & Rectifiers 2ND GEN THINQ 600V SiC Schottky Diode |
| Manufacturer | Infineon Technologies | INF | Infineon Technologies |
| Product Category | Diodes, Rectifiers - Single | Diodes, Rectifiers - Single | Diodes, Rectifiers - Single |
| Series | thinQ! | IDD04SG60 | thinQ! |
| Packaging | Tape & Reel (TR) | Reel | Digi-ReelR Alternate Packaging |
| Package Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount | - | Surface Mount |
| Supplier Device Package | PG-TO252-3 | - | PG-TO252-3 |
| Speed | No Recovery Time > 500mA (Io) | - | No Recovery Time > 500mA (Io) |
| Diode Type | Silicon Carbide Schottky | - | Silicon Carbide Schottky |
| Current Reverse Leakage Vr | 50μA @ 600V | - | 50μA @ 600V |
| Voltage Forward Vf Max If | 1.9V @ 4A | - | 1.9V @ 4A |
| Voltage DC Reverse Vr Max | 600V | - | 600V |
| Current Average Rectified Io | 5.6A | - | 5.6A |
| Reverse Recovery Time trr | 0ns | - | 0ns |
| Capacitance Vr F | 130pF @ 1V, 1MHz | - | 130pF @ 1V, 1MHz |
| Operating Temperature Junction | -55°C ~ 175°C | - | -55°C ~ 175°C |
| Product | - | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes |
| Part Aliases | - | IDD04SG60CXT IDD04SG60CXTMA1 SP000786804 | IDD04S60CBUMA1 IDD04S60CXT SP000080224 |
| Unit Weight | - | 0.063493 oz | 0.063493 oz |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Technology | - | SiC | SiC |
| Configuration | - | Single | Single |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Vf Forward Voltage | - | 2.3 V | 1.7 V |
| Ir Reverse Current | - | 25 uA | 50 uA |
| If Forward Current | - | 4 A | 4 A |
| Vrrm Repetitive Reverse Voltage | - | 600 V | 600 V |
| Ifsm Forward Surge Current | - | 18 A | 32 A |