IDH10G120C5XKSA1 vs IDH10G65C5 D1065C5 vs IDH10G65C5

 
PartNumberIDH10G120C5XKSA1IDH10G65C5 D1065C5IDH10G65C5
DescriptionSchottky Diodes & Rectifiers SIC CHIP/DISCRETESchottky Diodes & Rectifiers SIC DIODES
ManufacturerInfineon-Infineon Technologies
Product CategorySchottky Diodes & Rectifiers-Diodes, Rectifiers - Single
RoHSY--
ProductSchottky Silicon Carbide Diodes--
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-2--
If Forward Current10 A--
Vrrm Repetitive Reverse Voltage1.2 kV--
Vf Forward Voltage1.5 V--
Ifsm Forward Surge Current99 A--
ConfigurationSingle--
TechnologySiC--
Ir Reverse Current4 uA--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
PackagingTube-Bulk
BrandInfineon Technologies--
Pd Power Dissipation165 W--
Product TypeSchottky Diodes & Rectifiers--
Factory Pack Quantity500--
SubcategoryDiodes & Rectifiers--
TradenameCoolSiC--
Vr Reverse Voltage1.2 kV--
Part # AliasesIDH10G120C5 SP001079722--
Unit Weight0.211644 oz-0.211644 oz
Series--thinQ!
Part Aliases--IDH10G65C5XK IDH10G65C5XKSA1 SP000925208
Package Case--TO-220-2
Mounting Type--Through Hole
Supplier Device Package--PG-TO220-2
Speed--No Recovery Time > 500mA (Io)
Diode Type--Silicon Carbide Schottky
Current Reverse Leakage Vr--340μA @ 650V
Voltage Forward Vf Max If--1.7V @ 10A
Voltage DC Reverse Vr Max--650V
Current Average Rectified Io--10A (DC)
Reverse Recovery Time trr--0ns
Capacitance Vr F--300pF @ 1V, 1MHz
Operating Temperature Junction---55°C ~ 175°C
Top