 | |  | |
| PartNumber | IFN5115 | IFN5114 | IFN5116 |
| Description | JFET JFET P-Channel | JFET JFET P-Channel | JFET P-Channel 50mA |
| Manufacturer | InterFET | InterFET | InterFET |
| Product Category | JFET | JFET | JFETs (Junction Field Effect) |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-18-3 | TO-18-3 | - |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Configuration | Single | Single | Single |
| Vds Drain Source Breakdown Voltage | - 15 V | - 15 V | - |
| Vgs Gate Source Breakdown Voltage | 30 V | 30 V | - |
| Drain Source Current at Vgs=0 | - 60 mA | - 90 mA | - |
| Id Continuous Drain Current | - 15 mA | - 15 mA | - |
| Rds On Drain Source Resistance | 100 Ohms | 75 Ohms | - |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | - |
| Series | IFN511 | IFN511 | - |
| Packaging | Bulk | Bulk | - |
| Type | JFET | JFET | - |
| Brand | InterFET | InterFET | - |
| Gate Source Cutoff Voltage | 6 V | 10 V | 4 V |
| Factory Pack Quantity | 1 | 1 | - |
| Part # Aliases | 2N5115 | 2N5114 | - |
| Part Aliases | - | - | 2N5116 |
| Package Case | - | - | TO-18-3 |
| Pd Power Dissipation | - | - | 500 mW |
| Id Continuous Drain Current | - | - | - 15 mA |
| Vds Drain Source Breakdown Voltage | - | - | - 15 V |
| Rds On Drain Source Resistance | - | - | 150 Ohms |
| Vgs Gate Source Breakdown Voltage | - | - | 30 V |
| Drain to Source Voltage Vdss | - | - | - 25 mA |