IGW15N120H3 vs IGW15N120H3FKSA1 vs IGW15N60N

 
PartNumberIGW15N120H3IGW15N120H3FKSA1IGW15N60N
DescriptionIGBT Transistors IGBT PRODUCTSIGBT Transistors IGBT PRODUCTS
ManufacturerInfineonInfineon-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSY--
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.05 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C30 A--
Pd Power Dissipation217 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesHighSpeed 3HighSpeed 3-
PackagingTubeTube-
BrandInfineon TechnologiesInfineon Technologies-
Gate Emitter Leakage Current600 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity240--
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesIGW15N120H3FKSA1 IGW15N12H3XK SP000674430IGW15N120H3 IGW15N12H3XK SP000674430-
Unit Weight1.340411 oz--
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