IGW40N120H3 vs IGW40N120H3FKSA1 vs IGW40N120H3 G40H1203

 
PartNumberIGW40N120H3IGW40N120H3FKSA1IGW40N120H3 G40H1203
DescriptionIGBT Transistors IGBT PRODUCTSIGBT Transistors IGBT PRODUCTS
ManufacturerInfineonInfineon-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSY--
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.05 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C80 A--
Pd Power Dissipation483 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesHighSpeed 3HighSpeed 3-
PackagingTubeTube-
BrandInfineon TechnologiesInfineon Technologies-
Gate Emitter Leakage Current600 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity240--
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesIGW40N120H3FKSA1 IGW4N12H3XK SP000667510IGW40N120H3 IGW4N12H3XK SP000667510-
Unit Weight1.340411 oz--
Top