IGW50N60H3 vs IGW50N60H3 , 2SC5183 vs IGW50N60H3 G50H603

 
PartNumberIGW50N60H3IGW50N60H3 , 2SC5183IGW50N60H3 G50H603
DescriptionIGBT Transistors 600V 50A 333W
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.85 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C100 A--
Pd Power Dissipation333 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesHighSpeed 3--
PackagingTube--
Continuous Collector Current Ic Max100 A--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIGW50N60H3FKSA1 IGW5N6H3XK SP000702548--
Unit Weight1.340411 oz--
Top