IGW50N65F5 vs IGW50N65F5 G50F655 vs IGW50N65F5A

 
PartNumberIGW50N65F5IGW50N65F5 G50F655IGW50N65F5A
DescriptionIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
ManufacturerInfineon-Infineon Technologies
Product CategoryIGBT Transistors-IGBTs - Single
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.6 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C80 A--
Pd Power Dissipation305 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesTRENCHSTOP 5 F5-Automotive, AEC-Q101, TrenchStop
PackagingTube-Tube
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIGW50N65F5FKSA1 SP000973426--
Part Aliases--IGW50N65F5A SP001187514
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--PG-TO247-3
Power Max--270W
Reverse Recovery Time trr---
Current Collector Ic Max--80A
Voltage Collector Emitter Breakdown Max--650V
IGBT Type--Trench
Current Collector Pulsed Icm--150A
Vce on Max Vge Ic--2.1V @ 15V, 50A
Switching Energy--490μJ (on), 140μJ (off)
Gate Charge--108nC
Td on off 25°C--21ns/156ns
Test Condition--400V, 25A, 12 Ohm, 15V
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