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| PartNumber | IKB20N60TAATMA1 | IKB20N60TA | IKB20N60TATMA1 |
| Description | IGBT Transistors IGBT PRODUCTS | IGBT Transistors IGBT PRODUCTS | IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 1.5 V | 1.5 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 40 A | 41 A | - |
| Pd Power Dissipation | 156 W | 166 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Series | TRENCHSTOP | TRENCHSTOP | TRENCHSTOP IGBT |
| Packaging | Reel | Reel | Reel |
| Continuous Collector Current Ic Max | 40 A | - | - |
| Height | 4.57 mm | - | - |
| Length | 10.31 mm | - | - |
| Width | 9.45 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | TRENCHSTOP | TRENCHSTOP | TRENCHSTOP |
| Part # Aliases | IKB20N60TA IKB2N6TAXT SP000629372 | IKB20N60TAATMA1 IKB2N6TAXT SP000629372 | IKB20N60T IKB2N6TXT SP000054883 |
| Unit Weight | - | 0.077603 oz | - |