PartNumber | IKB40N65ES5ATMA1 | IKB40N65EH5ATMA1 | IKB40N65EF5ATMA1 |
Description | IGBT Transistors 40A 650V TRENCHSTOP 5 medium speed S5 IGBT copacked with 40A Rapid 1 diode | IGBT Transistors 40A 650V TRENCHSTOP 5 fast H5 IGBT copacked with 40A Rapid 1 diode | IGBT Transistors 40A 650V TRENCHSTOP 5 ultra fast F5 IGBT copacked with 40A Rapid 1 diode |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
Collector Emitter Saturation Voltage | 1.35 V | 1.65 V | 1.6 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 79 A | 74 A | 74 A |
Pd Power Dissipation | 230 W | 250 W | 250 W |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Series | TRENCHSTOP 5 | TRENCHSTOP 5 | TRENCHSTOP 5 |
Packaging | Reel | Reel | Reel |
Continuous Collector Current Ic Max | 79 A | 74 A | 74 A |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | IGBTs | IGBTs | IGBTs |
Part # Aliases | IKB40N65ES5 SP001613464 | IKB40N65EH5 SP001613462 | IKB40N65EF5 SP001612186 |