IMT1AT110 vs IMT1AT108 vs IMT1A T100

 
PartNumberIMT1AT110IMT1AT108IMT1A T100
DescriptionBipolar Transistors - BJT DUAL PNP 50V 150MA SOT-457Bipolar Transistors - BJT TRANS GP BJT PNP 50V 0.15A 6PIN
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Transistor PolarityPNPPNP-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max- 50 V- 50 V-
Collector Base Voltage VCBO- 60 V- 60 V-
Emitter Base Voltage VEBO- 6 V- 6 V-
Maximum DC Collector Current0.15 A0.15 A-
Gain Bandwidth Product fT140 MHz140 MHz-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max560560-
Height1.1 mm1.1 mm-
Length2.9 mm2.9 mm-
PackagingReelReel-
Width1.6 mm1.6 mm-
BrandROHM SemiconductorROHM Semiconductor-
Continuous Collector Current- 150 mA- 150 mA-
DC Collector/Base Gain hfe Min120120-
Pd Power Dissipation300 mW300 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Part # AliasesIMT1A--
Package / Case-SMT-6-
Collector Emitter Saturation Voltage-- 0.5 V-
Minimum Operating Temperature-- 55 C-
Top