PartNumber | IPA052N08NM5SXKSA1 | IPA050N10NM5SXKSA1 | IPA057N06N |
Description | MOSFET | MOSFET | |
Manufacturer | Infineon | Infineon | Infineon Technologies |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Packaging | Tube | Tube | Tube |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 500 | 500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | IPA052N08NM5S SP001953076 | IPA050N10NM5S SP001962884 | - |
Series | - | - | OptiMOS 3 |
Part Aliases | - | - | IPA057N06N3GXK IPA057N06N3GXKSA1 SP000457582 |
Unit Weight | - | - | 0.211644 oz |
Mounting Style | - | - | Through Hole |
Tradename | - | - | OptiMOS |
Package Case | - | - | TO-220-3 |
Technology | - | - | Si |
Number of Channels | - | - | 1 Channel |
Configuration | - | - | Single |
Transistor Type | - | - | 1 N-Channel |
Pd Power Dissipation | - | - | 38 W |
Maximum Operating Temperature | - | - | + 175 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 9 ns |
Rise Time | - | - | 68 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 60 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 5.7 mOhms |
Transistor Polarity | - | - | N-Channel |
Typical Turn Off Delay Time | - | - | 32 ns |
Typical Turn On Delay Time | - | - | 24 ns |
Qg Gate Charge | - | - | 61 nC |
Forward Transconductance Min | - | - | 82 S |
Channel Mode | - | - | Enhancement |