IPA057N06N3 G vs IPA057N06N3GXKSA1 vs IPA057N06N

 
PartNumberIPA057N06N3 GIPA057N06N3GXKSA1IPA057N06N
DescriptionMOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220FP-3TO-220FP-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current60 A60 A-
Rds On Drain Source Resistance4.6 mOhms4.6 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge82 nC82 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation38 W38 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameOptiMOSOptiMOSOptiMOS
PackagingTubeTubeTube
Height16.15 mm16.15 mm-
Length10.65 mm10.65 mm-
SeriesOptiMOS 3OptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.85 mm4.85 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min41 S41 S-
Fall Time9 ns9 ns9 ns
Product TypeMOSFETMOSFET-
Rise Time68 ns68 ns68 ns
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time32 ns32 ns32 ns
Typical Turn On Delay Time24 ns24 ns24 ns
Part # AliasesIPA057N06N3GXKSA1 IPA57N6N3GXK SP000457582G IPA057N06N3 IPA57N6N3GXK SP000457582-
Unit Weight0.211644 oz0.211644 oz0.211644 oz
Part Aliases--IPA057N06N3GXK IPA057N06N3GXKSA1 SP000457582
Package Case--TO-220-3
Pd Power Dissipation--38 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--60 A
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--5.7 mOhms
Qg Gate Charge--61 nC
Forward Transconductance Min--82 S
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