IPA100N08N3 G vs IPA100N08N3GXKSA1 vs IPA100N08N3

 
PartNumberIPA100N08N3 GIPA100N08N3GXKSA1IPA100N08N3
DescriptionMOSFET N-Ch 80V 40A TO220FP-3 OptiMOS 3MOSFET N-CH 80V 40A TO220-3
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220FP-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance10 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge9 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation35 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameOptiMOS-OptiMOS
PackagingTube-Tube
Height16.15 mm--
Length10.65 mm--
SeriesOptiMOS 3-OptiMOS 3
Transistor Type1 N-Channel-1 N-Channel
Width4.85 mm--
BrandInfineon Technologies--
Fall Time5 ns-5 ns
Product TypeMOSFET--
Rise Time30 ns-30 ns
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns-23 ns
Typical Turn On Delay Time13 ns-13 ns
Part # AliasesIPA100N08N3GXKSA1 IPA1N8N3GXK SP000473900--
Unit Weight0.211644 oz-0.211644 oz
Part Aliases--IPA100N08N3GXK IPA100N08N3GXKSA1 SP000473900
Package Case--TO-220-3
Pd Power Dissipation--35 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--40 A
Vds Drain Source Breakdown Voltage--80 V
Rds On Drain Source Resistance--10 mOhms
Qg Gate Charge--9 nC
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