IPA180N10N3 G vs IPA180N10N3GXKSA1 vs IPA180N10N3

 
PartNumberIPA180N10N3 GIPA180N10N3GXKSA1IPA180N10N3
DescriptionMOSFET N-Ch 100V 28A TO220FP-3 OptiMOS 3MOSFET N-CH 100V 28A TO220-FP
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220FP-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current28 A--
Rds On Drain Source Resistance18 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation30 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameOptiMOS-OptiMOS
PackagingTube-Tube
Height16.15 mm--
Length10.65 mm--
SeriesOptiMOS 3-OptiMOS 3
Transistor Type1 N-Channel-1 N-Channel
Width4.85 mm--
BrandInfineon Technologies--
Fall Time3 ns-3 ns
Product TypeMOSFET--
Rise Time5 ns-5 ns
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns-18 ns
Typical Turn On Delay Time11 ns-11 ns
Part # AliasesIPA180N10N3GXKSA1 IPA18N1N3GXK SP000480108--
Unit Weight0.211644 oz-0.211644 oz
Part Aliases--IPA180N10N3GXK IPA180N10N3GXKSA1 SP000480108
Package Case--TO-220-3
Pd Power Dissipation--30 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--28 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--18 mOhms
Qg Gate Charge--7 nC
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