IPA50R800CE vs IPA50R800CE(5R800E) vs IPA50R800CEXKSA1

 
PartNumberIPA50R800CEIPA50R800CE(5R800E)IPA50R800CEXKSA1
DescriptionMOSFET CONSUMERDarlington Transistors MOSFET N-Ch 550V 5A TO220FP-3
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220FP-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current7.6 A--
Rds On Drain Source Resistance720 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge12.4 nC--
Minimum Operating Temperature- 40 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation26.4 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
TradenameCoolMOS-CoolMOS
PackagingTube-Tube
Height16.15 mm--
Length10.65 mm--
SeriesCoolMOS CE-IPA50R800
Transistor Type1 N-Channel-1 N-Channel
Width4.85 mm--
BrandInfineon Technologies--
Fall Time15.9 ns-15.9 ns
Product TypeMOSFET--
Rise Time5.5 ns-5.5 ns
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26 ns-26 ns
Typical Turn On Delay Time6.2 ns-6.2 ns
Part # AliasesIPA50R800CEXKSA2 SP001217234--
Unit Weight0.068784 oz-0.211644 oz
Part Aliases--SP000992084
Package Case--TO-220-3
Pd Power Dissipation--26 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--5 A
Vds Drain Source Breakdown Voltage--500 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--500 V
Qg Gate Charge--12.4 nC
Top