PartNumber | IPA60R120P7XKSA1 | IPA60R120C7XKSA1 | IPA60R125 |
Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | |
Manufacturer | Infineon | Infineon | INFINEON |
Product Category | MOSFET | MOSFET | IC Chips |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220FP-3 | TO-220FP-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
Id Continuous Drain Current | 26 A | 11 A | - |
Rds On Drain Source Resistance | 100 mOhms | 120 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 36 nC | 34 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 28 W | 32 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Tube | Tube | Tube |
Series | CoolMOS P7 | CoolMOS C7 | CoolMOS C6 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 6 ns | 5 ns | 7 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 14 ns | 7 ns | 12 ns |
Factory Pack Quantity | 500 | 500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 81 ns | 52 ns | 83 ns |
Typical Turn On Delay Time | 21 ns | 10.7 ns | 15 ns |
Part # Aliases | IPA60R120P7 SP001658376 | IPA60R120C7 SP001385040 | - |
Unit Weight | 0.068784 oz | 0.068784 oz | 0.211644 oz |
Height | - | 16.15 mm | - |
Length | - | 10.65 mm | - |
Width | - | 4.85 mm | - |
Part Aliases | - | - | IPA60R125C6XK IPA60R125C6XKSA1 SP000685848 |
Package Case | - | - | TO-220-3 |
Pd Power Dissipation | - | - | 34 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 30 A |
Vds Drain Source Breakdown Voltage | - | - | 600 V |
Vgs th Gate Source Threshold Voltage | - | - | 3 V |
Rds On Drain Source Resistance | - | - | 125 mOhms |
Qg Gate Charge | - | - | 96 nC |