IPA60R120P7XKSA1 vs IPA60R120C7XKSA1 vs IPA60R125

 
PartNumberIPA60R120P7XKSA1IPA60R120C7XKSA1IPA60R125
DescriptionMOSFET HIGH POWER_NEWMOSFET HIGH POWER_NEW
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETMOSFETIC Chips
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220FP-3TO-220FP-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current26 A11 A-
Rds On Drain Source Resistance100 mOhms120 mOhms-
Vgs th Gate Source Threshold Voltage3 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge36 nC34 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation28 W32 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameCoolMOSCoolMOSCoolMOS
PackagingTubeTubeTube
SeriesCoolMOS P7CoolMOS C7CoolMOS C6
Transistor Type1 N-Channel-1 N-Channel
BrandInfineon TechnologiesInfineon Technologies-
Fall Time6 ns5 ns7 ns
Product TypeMOSFETMOSFET-
Rise Time14 ns7 ns12 ns
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time81 ns52 ns83 ns
Typical Turn On Delay Time21 ns10.7 ns15 ns
Part # AliasesIPA60R120P7 SP001658376IPA60R120C7 SP001385040-
Unit Weight0.068784 oz0.068784 oz0.211644 oz
Height-16.15 mm-
Length-10.65 mm-
Width-4.85 mm-
Part Aliases--IPA60R125C6XK IPA60R125C6XKSA1 SP000685848
Package Case--TO-220-3
Pd Power Dissipation--34 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--30 A
Vds Drain Source Breakdown Voltage--600 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--125 mOhms
Qg Gate Charge--96 nC
Top