IPA90R1K0C3 vs IPA90R1K0C3XKSA1 vs IPA90R1K2C

 
PartNumberIPA90R1K0C3IPA90R1K0C3XKSA1IPA90R1K2C
DescriptionMOSFET N-Ch 900V 5.7A TO220FP-3 CoolMOS C3MOSFET LOW POWER_LEGACY
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETMOSFETFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220FP-3TO-220FP-3-
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current5.7 A--
Rds On Drain Source Resistance1 Ohms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge34 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation32 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameCoolMOSCoolMOSCoolMOS
PackagingTubeTubeTube
Height16.15 mm16.15 mm-
Length10.65 mm10.65 mm-
SeriesCoolMOS C3-CoolMOS C3
Transistor Type1 N-Channel-1 N-Channel
Width4.85 mm4.85 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time35 ns-40 ns
Product TypeMOSFETMOSFET-
Rise Time20 ns-20 ns
Factory Pack Quantity500--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time400 ns-400 ns
Typical Turn On Delay Time70 ns-70 ns
Part # AliasesIPA90R1K0C3XKSA1 IPA9R1KC3XK SP000413712IPA90R1K0C3 IPA9R1KC3XK SP000413712-
Unit Weight0.211644 oz0.211644 oz0.211644 oz
Part Aliases--IPA90R1K2C3XK IPA90R1K2C3XKSA1 SP000413714
Package Case--TO-220-3
Pd Power Dissipation--31 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--5.1 A
Vds Drain Source Breakdown Voltage--900 V
Rds On Drain Source Resistance--1.2 Ohms
Qg Gate Charge--28 nC
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