PartNumber | IPB017N06N3 G | IPB017N06N | IPB017N06N 017N06N -7 |
Description | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | ||
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-7 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 180 A | - | - |
Rds On Drain Source Resistance | 1.3 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 275 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 250 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | - | - |
Height | 4.4 mm | - | - |
Length | 10 mm | - | - |
Series | OptiMOS 3 | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | OptiMOS 3 Power-Transistor | - | - |
Width | 9.25 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 99 S | - | - |
Fall Time | 24 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 80 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 79 ns | - | - |
Typical Turn On Delay Time | 41 ns | - | - |
Part # Aliases | IPB017N06N3GATMA1 IPB17N6N3GXT SP000434404 | - | - |
Unit Weight | 0.056438 oz | - | - |