PartNumber | IPB031NE7N3 G | IPB031NE7N3GATMA1 | IPB031NE7N3 |
Description | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | |
Manufacturer | Infineon | Infineon | Infineon Technologies |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
Id Continuous Drain Current | 100 A | 100 A | - |
Rds On Drain Source Resistance | 2.7 mOhms | 2.7 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.3 V | 2.3 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 117 nC | 117 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 214 W | 214 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 4.4 mm | 4.4 mm | - |
Length | 10 mm | 10 mm | - |
Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 9.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 75 S | 75 S | - |
Fall Time | 10 ns | 10 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 85 ns | 85 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 40 ns | 40 ns | - |
Typical Turn On Delay Time | 16 ns | 16 ns | - |
Part # Aliases | IPB031NE7N3GATMA1 IPB31NE7N3GXT SP000641730 | G IPB031NE7N3 IPB31NE7N3GXT SP000641730 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Part Aliases | - | - | IPB031NE7N3GATMA1 IPB031NE7N3GXT SP000641730 |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 214 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 100 A |
Vds Drain Source Breakdown Voltage | - | - | 75 V |
Vgs th Gate Source Threshold Voltage | - | - | 3.1 V |
Rds On Drain Source Resistance | - | - | 3.1 mOhms |
Qg Gate Charge | - | - | 88 nC |
Forward Transconductance Min | - | - | 150 S 75 S |