IPB072N15N3 G vs IPB072N15N3G 072N15N vs IPB072N15N3G , 2SD1935

 
PartNumberIPB072N15N3 GIPB072N15N3G 072N15NIPB072N15N3G , 2SD1935
DescriptionMOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance7.2 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge70 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min65 S--
Fall Time14 ns--
Product TypeMOSFET--
Rise Time35 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time46 ns--
Typical Turn On Delay Time25 ns--
Part # AliasesIPB072N15N3GATMA1 IPB72N15N3GXT SP000386664--
Unit Weight0.139332 oz--
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