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| PartNumber | IPB100N08S2L07ATMA1 | IPB100N08S2L-07 | IPB100N08S2L-07(PN08L07) |
| Description | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 4.7 mOhms | 6.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 246 nC | 246 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | 300 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 22 ns | 22 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 56 ns | 56 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 85 ns | 85 ns | - |
| Typical Turn On Delay Time | 19 ns | 19 ns | - |
| Part # Aliases | IPB100N08S2L-07 IPB1N8S2L7XT SP000219053 | IPB100N08S2L07ATMA1 IPB1N8S2L7XT SP000219053 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |