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| PartNumber | IPB108N15N3 G | IPB108N15N3GATMA1 | IPB108N15N3G 108N15N |
| Description | MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3 | MOSFET MV POWER MOS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 83 A | - | - |
| Rds On Drain Source Resistance | 10.8 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 41 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 214 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 94 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 35 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 32 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Part # Aliases | IPB108N15N3GATMA1 IPB18N15N3GXT SP000677862 | G IPB108N15N3 IPB18N15N3GXT SP000677862 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |