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| PartNumber | IPB120N03S4L03ATMA1 | IPB120N04S3-02 3PN0402 | IPB120N04S3-02 |
| Description | MOSFET N-CHANNEL_30/40V | IGBT Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T | |
| Manufacturer | Infineon | - | INF |
| Product Category | MOSFET | - | FETs - Single |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Configuration | Single | - | Single |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | Reel |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPB120N03S4L-03 SP000936514 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Series | - | - | OptiMOS-T |
| Part Aliases | - | - | IPB120N04S302ATMA1 IPB120N04S302XT SP000261216 |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 300 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 18 ns |
| Rise Time | - | - | 19 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Rds On Drain Source Resistance | - | - | 2 mOhms |
| Typical Turn Off Delay Time | - | - | 57 ns |
| Typical Turn On Delay Time | - | - | 35 ns |
| Channel Mode | - | - | Enhancement |