PartNumber | IPB60R160P6ATMA1 | IPB60R160C6ATMA1 | IPB60R160C6 |
Description | MOSFET HIGH POWER_PRICE/PERFORM | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Reel | Reel | Reel |
Height | 4.4 mm | 4.4 mm | 4.4 mm |
Length | 10 mm | 10 mm | 10 mm |
Series | CoolMOS P6 | CoolMOS C6 | CoolMOS C6 |
Width | 9.25 mm | 9.25 mm | 9.25 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPB60R160P6 SP001313876 | IPB60R160C6 IPB6R16C6XT SP000687552 | IPB60R160C6ATMA1 IPB6R16C6XT SP000687552 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Id Continuous Drain Current | - | 23.8 A | 23.8 A |
Rds On Drain Source Resistance | - | 140 mOhms | 140 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | 2.5 V |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | 75 nC | 75 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 176 W | 176 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Fall Time | - | 8 ns | 8 ns |
Rise Time | - | 13 ns | 13 ns |
Typical Turn Off Delay Time | - | 96 ns | 96 ns |
Typical Turn On Delay Time | - | 13 ns | 13 ns |