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| PartNumber | IPB60R360P7ATMA1 | IPB60R360CFD7ATMA1 | IPB60R330P6ATMA1 |
| Description | MOSFET LOW POWER_NEW | MOSFET | MOSFET N-CH TO263-3 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 9 A | - | - |
| Rds On Drain Source Resistance | 305 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 13 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 41 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 7 ns | - | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 42 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Part # Aliases | IPB60R360P7 SP001664948 | IPB60R360CFD7 SP002621072 | - |
| Part Aliases | - | - | IPB60R330P6 SP001364470 |
| Package Case | - | - | TO-263-3 |