IPB80N06S2L05ATMA1 vs IPB80N06S2L-06 vs IPB80N06S2L05XT

 
PartNumberIPB80N06S2L05ATMA1IPB80N06S2L-06IPB80N06S2L05XT
DescriptionMOSFET N-Ch 55V 80A D2PAK-2 OptiMOSMOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance3.3 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge230 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon Technologies--
Fall Time90 ns20 ns-
Product TypeMOSFET--
Rise Time93 ns21 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time67 ns60 ns-
Typical Turn On Delay Time19 ns11 ns-
Part # AliasesIPB80N06S2L-05 IPB80N06S2L05XT SP000219004--
Unit Weight0.139332 oz0.139332 oz-
Series-OptiMOS-
Part Aliases-IPB80N06S2L06ATMA1 IPB80N06S2L06ATMA2 SP001067880-
Package Case-TO-252-3-
Pd Power Dissipation-250 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-80 A-
Vds Drain Source Breakdown Voltage-55 V-
Rds On Drain Source Resistance-6 mOhms-
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