IPB80N06S2L06ATMA2 vs IPB80N06S2L06ATMA1 vs IPB80N06S2L-06

 
PartNumberIPB80N06S2L06ATMA2IPB80N06S2L06ATMA1IPB80N06S2L-06
DescriptionMOSFET N-CHANNEL_55/60VMOSFET N-CH 55V 80A TO263-3MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
ConfigurationSingle-Single
QualificationAEC-Q101--
PackagingReel-Reel
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel-1 N-Channel
Width9.25 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Part # AliasesIPB80N06S2L-06 SP001067880--
Unit Weight0.139332 oz-0.139332 oz
Series--OptiMOS
Part Aliases--IPB80N06S2L06ATMA1 IPB80N06S2L06ATMA2 SP001067880
Tradename--OptiMOS
Package Case--TO-252-3
Pd Power Dissipation--250 W
Maximum Operating Temperature--+ 175 C
Minimum Operating Temperature--- 55 C
Fall Time--20 ns
Rise Time--21 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--80 A
Vds Drain Source Breakdown Voltage--55 V
Rds On Drain Source Resistance--6 mOhms
Typical Turn Off Delay Time--60 ns
Typical Turn On Delay Time--11 ns
Channel Mode--Enhancement
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