PartNumber | IPD053N06N | IPD053N06N3G | IPD053N06N3GBTMA1 |
Description | MOSFET N-Ch 60V 45A DPAK-2 | MOSFET N-CH 60V 90A TO252-3 | |
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 45 A | - | - |
Rds On Drain Source Resistance | 4.5 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 32 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 83 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | - | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Series | OptiMOS 5 | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 38 S | - | - |
Fall Time | 7 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 12 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 20 ns | - | - |
Typical Turn On Delay Time | 12 ns | - | - |
Part # Aliases | IPD053N06NATMA1 IPD53N6NXT SP000962138 | - | - |
Unit Weight | 0.139332 oz | - | - |