PartNumber | IPD135N08N3GATMA1 | IPD135N08N3 G | IPD135N08N3GBTMA1 |
Description | MOSFET MV POWER MOS | MOSFET N-Ch 80V 45A DPAK-2 OptiMOS 3 | MOSFET N-CH 80V 45A TO252-3 |
Manufacturer | Infineon | Infineon Technologies | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 80 V | - | - |
Configuration | Single | Single | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Series | OptiMOS 3 | OptiMOS 3 | - |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | G IPD135N08N3 SP001127822 | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Part Aliases | - | IPD135N08N3GBTMA1 IPD135N08N3GXT SP000454266 | - |
Package Case | - | TO-252-3 | - |
Transistor Type | - | 1 N-Channel | - |
Pd Power Dissipation | - | 79 W | - |
Maximum Operating Temperature | - | + 175 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 5 ns | - |
Rise Time | - | 35 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 45 A | - |
Vds Drain Source Breakdown Voltage | - | 80 V | - |
Rds On Drain Source Resistance | - | 13.5 mOhms | - |
Typical Turn Off Delay Time | - | 18 ns | - |
Typical Turn On Delay Time | - | 12 ns | - |
Channel Mode | - | Enhancement | - |