IPD135N08N3GATMA1 vs IPD135N08N3 G vs IPD135N08N3GBTMA1

 
PartNumberIPD135N08N3GATMA1IPD135N08N3 GIPD135N08N3GBTMA1
DescriptionMOSFET MV POWER MOSMOSFET N-Ch 80V 45A DPAK-2 OptiMOS 3MOSFET N-CH 80V 45A TO252-3
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V--
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS 3OptiMOS 3-
Width6.22 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesG IPD135N08N3 SP001127822--
Unit Weight0.139332 oz0.139332 oz-
Part Aliases-IPD135N08N3GBTMA1 IPD135N08N3GXT SP000454266-
Package Case-TO-252-3-
Transistor Type-1 N-Channel-
Pd Power Dissipation-79 W-
Maximum Operating Temperature-+ 175 C-
Minimum Operating Temperature-- 55 C-
Fall Time-5 ns-
Rise Time-35 ns-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-45 A-
Vds Drain Source Breakdown Voltage-80 V-
Rds On Drain Source Resistance-13.5 mOhms-
Typical Turn Off Delay Time-18 ns-
Typical Turn On Delay Time-12 ns-
Channel Mode-Enhancement-
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