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| PartNumber | IPD180N10N3GATMA1 | IPD180N10N3 G | IPD180N10N3GATMA1 , 2SD2 |
| Description | MOSFET MV POWER MOS | MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | G IPD180N10N3 SP000900132 | IPD180N10N3GBTMA1 IPD18N1N3GXT SP000482438 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Id Continuous Drain Current | - | 43 A | - |
| Rds On Drain Source Resistance | - | 14.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 25 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 71 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 20 S | - |
| Fall Time | - | 5 ns | - |
| Rise Time | - | 12 ns | - |
| Typical Turn Off Delay Time | - | 19 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |