PartNumber | IPD30N06S2L13ATMA4 | IPD30N06S2L-13 | IPD30N06S2L13ATMA1 |
Description | MOSFET N-CHANNEL_55/60V | MOSFET N-CH 55V 30A TO252-3 | - Bulk (Alt: IPD30N06S2L13ATMA1) |
Manufacturer | Infineon | INFINEON | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PG-TO-252-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 55 V | - | - |
Id Continuous Drain Current | 30 A | - | - |
Rds On Drain Source Resistance | 13 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 54 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 136 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | - | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Fall Time | 21 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 43 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 33 ns | - | - |
Typical Turn On Delay Time | 16 ns | - | - |
Part # Aliases | IPD30N06S2L-13 SP001061280 | - | - |
Unit Weight | 0.139332 oz | - | - |