IPD50N03S2-07 vs IPD50N03S207ATMA1 vs IPD50N03S2L

 
PartNumberIPD50N03S2-07IPD50N03S207ATMA1IPD50N03S2L
DescriptionMOSFET N-Ch 30V 50A DPAK-2 OptiMOSMOSFET N-CHANNEL_30/40V
ManufacturerInfineonInfineoninfineon
Product CategoryMOSFETMOSFETFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance7.3 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation136 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time30 ns-15 ns
Product TypeMOSFETMOSFET-
Rise Time40 ns-30 ns
Factory Pack Quantity2500--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns-40 ns
Typical Turn On Delay Time18 ns-10 ns
Part # AliasesIPD50N03S207ATMA1 IPD5N3S27XT SP000254462IPD50N03S2-07 IPD5N3S27XT SP000254462-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Series--OptiMOS
Part Aliases--IPD50N03S2L06ATMA1 IPD50N03S2L06XT SP000254461
Package Case--TO-252-3
Pd Power Dissipation--136 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--50 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--6.4 mOhms
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