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| PartNumber | IPD50N04S4L08ATMA1 | IPD50N04S4L-08 | IPD50N04S4L-08(SP0007114 |
| Description | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2 | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 50 A | 50 A | - |
| Rds On Drain Source Resistance | 6.2 mOhms | 6.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V, - 16 V | 20 V, - 16 V | - |
| Qg Gate Charge | 30 nC | 30 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 46 W | 46 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | XPD50N04 | OptiMOS-T2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 18 ns | 18 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | 8 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 11 ns | 11 ns | - |
| Typical Turn On Delay Time | 4 ns | 4 ns | - |
| Part # Aliases | IPD50N04S4L-08 IPD5N4S4L8XT SP000711456 | IPD50N04S4L08ATMA1 IPD5N4S4L8XT SP000711456 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Tradename | - | OptiMOS | - |