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| PartNumber | IPD60R600P7ATMA1 | IPD60R600P6ATMA1 | IPD60R600P6 |
| Description | MOSFET | MOSFET LOW POWER_LEGACY | MOSFET N-Ch 600V 7.3A DPAK-2 CoolMOS P6 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 6 A | - | 5.6 A |
| Rds On Drain Source Resistance | 490 mOhms | - | 600 Ohms |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Series | CoolMOS P7 | CoolMOS P6 | CoolMOS P6 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 19 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 37 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Part # Aliases | IPD60R600P7 SP001606046 | IPD60R600P6 SP001178242 | IPD60R600P6BTMA1 SP001017050 |
| Unit Weight | 0.011993 oz | 0.139332 oz | 0.139332 oz |
| Height | - | 2.3 mm | 2.3 mm |
| Length | - | 6.5 mm | 6.5 mm |
| Width | - | 6.22 mm | 6.22 mm |