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| PartNumber | IPD70N10S3-12 | IPD70N10S3-12 QN1012 | IPD70N10S312ATMA1 |
| Description | MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T | MOSFET N-CH 100V 70A TO252-3 | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PG-TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 70 A | - | - |
| Rds On Drain Source Resistance | 11.1 mOhms | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 51 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | OptiMOS-T | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Part # Aliases | IPD70N10S312ATMA1 IPD7N1S312XT SP000427248 | - | - |
| Unit Weight | 0.139332 oz | - | - |