IPD80R2K8CEATMA1 vs IPD80R2K8CE vs IPD80R2K8CEBTMA1

 
PartNumberIPD80R2K8CEATMA1IPD80R2K8CEIPD80R2K8CEBTMA1
DescriptionMOSFET N-Ch 800V 1.9A DPAK-2Trans MOSFET N-CH 800(Min)V 1.9A 3-Pin TO-252 T/R (Alt: IPD80R2K8CE)MOSFET N-Ch 800V 1.9A DPAK-2
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current1.9 A--
Rds On Drain Source Resistance2.8 Ohms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge12 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation42 W--
ConfigurationSingle-Single
TradenameCoolMOS--
PackagingReel-Reel
Height2.3 mm--
Length6.5 mm--
SeriesCoolMOS CE-XPD80R2
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandInfineon Technologies--
Fall Time18 ns-18 ns
Product TypeMOSFET--
Rise Time15 ns-15 ns
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time72 ns-72 ns
Typical Turn On Delay Time25 ns-25 ns
Part # AliasesIPD80R2K8CE SP001130970--
Unit Weight0.139332 oz-0.139332 oz
Part Aliases--IPD80R2K8CE SP001100602
Package Case--TO-252-3
Pd Power Dissipation--42 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--1.9 A
Vds Drain Source Breakdown Voltage--800 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--2.8 Ohms
Qg Gate Charge--12 nC
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