PartNumber | IPD90N10S4L06ATMA1 | IPD90N10S4L-06 | IPD90N10S406ATMA1 |
Description | MOSFET MOSFET | MOSFET MOSFET | MOSFET N-CHANNEL_100+ |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | PG-TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 90 A | 90 A | - |
Rds On Drain Source Resistance | 5.8 mOhms | 6.6 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.1 V | 1.1 V | - |
Vgs Gate Source Voltage | 16 V | 10 V | - |
Qg Gate Charge | 98 nC | 75 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 136 W | 136 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Series | IPD90N10 | XPD90N10 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 40 ns | 40 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 6 ns | 6 ns | - |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 42 ns | 42 ns | - |
Typical Turn On Delay Time | 8 ns | 8 ns | - |
Part # Aliases | IPD90N10S4L-06 SP000866562 | IPD90N10S4L06ATMA1 SP000866562 | IPD90N10S4-06 SP001101896 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |