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| PartNumber | IPG20N06S4L-11 | IPG20N06S4L-11A | IPG20N06S4L-14 |
| Description | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | RF Bipolar Transistors MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | |
| Manufacturer | Infineon | - | INFINEON |
| Product Category | MOSFET | - | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 11.2 mOhms | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 65 W | - | - |
| Configuration | Dual | - | Dual |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | Reel |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Transistor Type | 2 N-Channel | - | 2 N-Channel |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPG20N06S4L11ATMA1 IPG2N6S4L11XT SP000705550 | - | - |
| Series | - | - | OptiMOS-T2 |
| Part Aliases | - | - | IPG20N06S4L14ATMA1 IPG20N06S4L14ATMA2 IPG20N06S4L14XT SP001028632 |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TDSON-8 |
| Pd Power Dissipation | - | - | 50 W |
| Vgs Gate Source Voltage | - | - | 16 V |
| Id Continuous Drain Current | - | - | 20 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 13.7 mOhms |