PartNumber | IPG20N06S4L11AATMA1 | IPG20N06S4L11ATMA1 | IPG20N06S4L11ATMA1-CUT TAPE |
Description | MOSFET N-CHANNEL_55/60V | MOSFET N-CHANNEL_55/60V | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TDSON-8 | TDSON-8 | - |
Number of Channels | 2 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 20 A | - | - |
Rds On Drain Source Resistance | 15.8 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 16 V | - | - |
Qg Gate Charge | 53 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 65 W | - | - |
Configuration | Dual | Single | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.27 mm | 1.27 mm | - |
Length | 5.9 mm | 5.9 mm | - |
Series | OptiMOS-T2 | OptiMOS-T2 | - |
Transistor Type | 2 N-Channel | 1 N-Channel | - |
Width | 5.15 mm | 5.15 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 19 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3 ns | - | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 58 ns | - | - |
Typical Turn On Delay Time | 11 ns | - | - |
Part # Aliases | IPG20N06S4L-11A SP001200162 | IPG20N06S4L-11 IPG2N6S4L11XT SP000705550 | - |