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| PartNumber | IPG20N06S4L26AATMA1 | IPG20N06S4L26ATMA1 | IPG20N06S4L26AATMA1-CUT TAPE |
| Description | MOSFET N-Ch 55V 20A TDSON-8 | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 20 A | 20 A | - |
| Rds On Drain Source Resistance | 21 mOhms, 21 mOhms | 21 mOhms, 21 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 16 V | 16 V | - |
| Qg Gate Charge | 20 nC, 20 nC | 20 nC, 20 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 33 W | 33 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS-T2 | OptiMOS-T2 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 10 ns, 10 ns | 10 ns, 10 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 1.5 ns, 1.5 ns | 1.5 ns, 1.5 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 18 ns, 18 ns | 18 ns, 18 ns | - |
| Typical Turn On Delay Time | 5 ns, 5 ns | 5 ns, 5 ns | - |
| Part # Aliases | IPG20N06S4L-26A SP001023848 | IPG20N06S4L-26 IPG2N6S4L26XT SP000705588 | - |
| Unit Weight | 0.003474 oz | 0.003527 oz | - |