PartNumber | IPP072N10N3 G | IPP072N10N3 G(SP00068083 | IPP072N10N3G 072N10N |
Description | MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 | ||
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 80 A | - | - |
Rds On Drain Source Resistance | 6.2 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 68 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 150 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | - | - |
Packaging | Tube | - | - |
Height | 15.65 mm | - | - |
Length | 10 mm | - | - |
Series | OptiMOS 3 | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 4.4 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 50 S | - | - |
Fall Time | 9 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 37 ns | - | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 37 ns | - | - |
Typical Turn On Delay Time | 19 ns | - | - |
Part # Aliases | IPP072N10N3GXKSA1 IPP72N1N3GXK SP000680830 | - | - |
Unit Weight | 0.211644 oz | - | - |